Temperature dependent refractive index of silicon and germanium

Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important in the field of infrared lens design. Optical instruments designed for the wavelength range where these two materials are transmissive achieve best performance when cooled to cryogenic temperatures to enhance signal from the scene over instrument background radiation. In order to enable high quality lens designs using silicon and germanium at cryogenic temperatures, we have measured the absolute refractive index of multiple prisms of these two materials using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA Goddard Space Flight Center, as a function of both wavelength and temperature. For silicon, we report absolute refractive index and thermo-optic coefficient (dn/dT) at temperatures ranging from 20 to 300 K at wavelengths from 1.1 to 5.6 microns, while for germanium, we cover temperatures ranging from 20 to 300 K and wavelengths from 1.9 to 5.5 microns. We compare our measurements with others in the literature and provide temperature-dependent Sellmeier coefficients based on our data to allow accurate interpolation of index to other wavelengths and temperatures. Citing the wide variety of values for the refractive indices of these two materials found in the literature, we reiterate the importance of measuring the refractive index of a sample from the same batch of raw material from which final optical components are cut when absolute accuracy greater than +/-5 x 10^-3 is desired.Comment: 10 pages, 8 figures, to be published in the Proc. of SPIE 6273 (Orlando

Exclusion Processes with Internal States

We introduce driven exclusion processes with internal states that serve as generic transport models in various contexts, ranging from molecular or vehicular traffic on parallel lanes to spintronics. The ensuing non-equilibrium steady states are controllable by boundary as well as bulk rates. A striking polarization phenomenon accompanied by domain wall motion and delocalization is discovered within a mesoscopic scaling. We quantify this observation within an analytic description providing exact phase diagrams. Our results are confirmed by stochastic simulations.Comment: 4 pages, 3 figures. Version as published in Phys. Rev. Let

Design concepts to improve high performance solar simulator

By improving several important components of the well known off-axis solar simulator system, a considerable step forward was made. The careful mathematical studies on the optics and the thermal side of the problem lead to a highly efficient system with low operational costs and a high reliability. The actual performance of the simulator is significantly better than the specified one, and the efficiency is outstanding. No more than 12 lamps operating at 18 kW are required to obtain one Solar Constant in the 6 m beam. It is now known that by using sophisticated optics, even larger facilities of high performance can be designed without leaving the proven off-axis concept and using a spherical mirror. Using high performance optics is a means of reducing costs at a given size of beam because the number of lamps is one of the most cost driving factors in the construction of a solar simulator